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Same model may have multiple batches, images only for reference.
VP0808B Real Image
Same model may have multiple batches, images only for reference.

VP0808B

Part No VP0808B
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 80V 0.88A TO-205
Datasheet
VP0808B Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 880mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-39
Dimension TO-205AD, TO-39-3 Metal Can
Win Source Part Number 145076-VP0808B
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian VP0808B CAD Model

Description

The VP0808B is a MOSFET technology-based electronic component manufactured by Vishay.

  • Polarity: P-Channel
  • Maximum Power Dissipation: 6.25W (Ta)
  • Supply and Demand Status: Limited
  • Popularity: Medium
  • Case/Package: TO-39
  • Dimension: TO-205AD, TO-39-3 Metal Can
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 880mA (Ta)
  • Gate-Source Threshold Voltage: 4.5V @ 1mA
  • Maximum Input Capacitance: 150pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 5 Ohm @ 1A, 10V

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