The Winbond W24258Q-70LE is a high-speed CMOS static RAM (SRAM) device organized as 32K x 8 bits. It is designed for memory applications requiring fast access times and low power consumption. This SRAM utilizes advanced circuit techniques to provide both high speed and low power characteristics.

Applications:

• Embedded systems
• Cache memory
• Buffer memory
• Networking devices
• Industrial control systems

Features:

• Fast access time: 70ns
• Low power consumption
• Single 5V power supply
• TTL compatible inputs and outputs
• Three-state outputs
• Available in various package options

Benefits:

• High-speed operation enables quick data retrieval and processing.
• Low power consumption extends battery life in portable applications and reduces overall power costs.
• Easy integration into existing systems due to TTL compatibility.
• Flexible output control via three-state outputs.
• Multiple package options offer design flexibility.

Technical Specifications:

The W24258Q-70LE operates on a single 5V power supply. It has a typical operating current in the mA range and a standby current in the uA range. The device is available in various package options, including DIP and SOIC. The operating temperature range is typically 0°C to 70°C. The access time is a crucial specification, rated at 70ns, determining how quickly data can be read from the memory. The data retention voltage is typically 2V.

The device supports standard SRAM read and write operations. The address inputs are used to select one of the 32,768 memory locations. The data inputs/outputs are used to write data to or read data from the selected memory location. The chip enable (CE) input is used to activate or deactivate the device. The output enable (OE) input is used to control the output drivers. The write enable (WE) input is used to control the write operation.