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NCE603S

Part No NCE603S
Manufacturer Wuxi NCE Power Semiconductor Co., Ltd
Description NCE 60V Complementary MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Wuxi NCE Power Semiconductor Co., Ltd
Win Source Part Number 1229762-NCE603S
Manufacturer Homepage www.ncepower.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NCE603S CAD Model

Description

The NCE603S is an N-Channel enhancement mode Power MOSFET from Wuxi NCE Power Semiconductor Co., Ltd. It is designed for high-efficiency switching applications and features low on-resistance and fast switching speeds. This MOSFET is suitable for applications such as DC-DC converters, motor control, and power management systems.

Applications:

  • DC-DC Converters
  • Motor Control
  • Power Management Systems
  • LED Lighting
  • Battery Chargers

Features:

  • N-Channel Enhancement Mode
  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • Avalanche Rated
  • Simple Drive Requirement
  • RoHS Compliant

Benefits:

  • High Efficiency: Low RDS(on) minimizes power loss and increases efficiency in switching applications.
  • Fast Switching: Reduces switching losses, improving overall system performance.
  • Robust Design: Avalanche rating ensures the device can withstand transient voltage spikes.
  • Simplified Circuitry: Simple drive requirement reduces the complexity of the gate drive circuit.
  • Environmentally Friendly: RoHS compliance ensures the device is environmentally friendly.

Technical Specifications:

The NCE603S typically has a drain-source voltage (VDS) rating of 60V. The gate-source voltage (VGS) rating is typically ±20V. Continuous drain current (ID) is dependent on the specific application conditions and package temperature. The on-resistance (RDS(on)) is very low, typically in the milliohm range. The device is available in a variety of surface mount packages such as TO-252 or similar.

The NCE603S utilizes advanced trench technology to achieve its low on-resistance and fast switching speeds. The avalanche rating indicates that the device can withstand transient voltage spikes, making it suitable for applications with inductive loads. The simple drive requirement simplifies the design of the gate drive circuit, reducing the number of components and lowering system costs. The MOSFET's low on-resistance ensures that power loss is minimized during switching operations, leading to improved energy efficiency in the target application.

Wuxi NCE Power Semiconductor's NCE603S is a suitable choice for applications requiring a high-efficiency, fast-switching MOSFET with robust design features. Its combination of low on-resistance, fast switching speed, and avalanche rating makes it a versatile component for a wide range of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2697 $56.6370
510+ $0.2213 $112.8630
785+ $0.2145 $168.3825
1,080+ $0.2075 $224.1000
1,400+ $0.2006 $280.8400
1,870+ $0.1799 $336.4130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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