The NCE6080A is an N-channel enhancement mode power MOSFET produced by Wuxi NCE Power Semiconductor. This MOSFET is designed for high-efficiency switching applications, providing low on-resistance and fast switching speeds. It is commonly used in power management circuits, DC-DC converters, and motor control applications.

Applications

• DC-DC converters
• Power management in portable devices
• Motor control circuits
• LED lighting applications
• Synchronous rectification

Features

• N-channel enhancement mode
• Low on-resistance (RDS(on))
• Fast switching speed
• High avalanche ruggedness
• RoHS compliant
• Standard TO-252 package

Benefits

• High efficiency reduces power losses in switching applications.
• Fast switching speeds enable higher frequency operation.
• Robust design ensures reliability in demanding applications.
• Environmentally friendly due to RoHS compliance.

Technical Specifications

The NCE6080A features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of approximately 8A. The on-resistance (RDS(on)) is typically around 8 milliohms at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is typically between 1V and 3V. The device is packaged in a standard TO-252 package suitable for surface mount assembly. It is designed for operation within a temperature range of -55°C to +175°C.