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ZVN2106G

Part No ZVN2106G
Manufacturer Zetex Semiconductors
Catalog Electronic Wholesale
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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Rohs State rohs
ECAD Module
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Manufacturer Zetex Semiconductors
Win Source Part Number 1283317-ZVN2106G
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian ZVN2106G CAD Model

Description

The ZVN2106G is a small signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Zetex Semiconductors (now part of Diodes Incorporated). It is designed for low voltage, low current switching and amplification applications. This MOSFET is commonly used in portable devices, logic-level interfaces, and analog switches due to its low gate threshold voltage and fast switching speed.

Applications:

  • Low-Side Switching: Controlling low-side loads such as LEDs, small motors, and relays.
  • Logic-Level Interfacing: Interfacing between low-voltage logic circuits and higher-voltage loads.
  • Analog Switching: Switching analog signals in audio and instrumentation circuits.
  • DC-DC Conversion: Used in simple DC-DC converters for voltage regulation.
  • Portable Devices: Suitable for battery-powered applications due to its low on-resistance and gate drive requirements.

Features:

  • Low Gate Threshold Voltage: Allows for direct drive from low-voltage logic circuits (e.g., 3.3V or 5V).
  • Low On-Resistance (RDS(on)): Minimizes power dissipation and voltage drop across the MOSFET.
  • Fast Switching Speed: Enables high-frequency switching and efficient operation.
  • Small Outline Package (SOT23): Suitable for space-constrained applications.
  • Lead-Free Finish: Compliant with RoHS environmental standards.

Benefits:

  • Simplified Circuit Design: Allows for direct drive from logic-level circuits, reducing the need for external driver components.
  • Improved Energy Efficiency: Low on-resistance minimizes power losses, extending battery life in portable devices.
  • Fast Response Time: Enables high-speed switching in dynamic circuits.
  • Compact Size: Facilitates miniaturization of electronic devices.
  • Enhanced System Performance: Contributes to improved overall system efficiency and reliability.

Additional Details:

The ZVN2106G has a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) rating of typically 230mA. The typical gate threshold voltage (VGS(th)) is around 1V. It is available in a SOT23 surface mount package. Key specifications include gate charge, input capacitance, and output capacitance. This MOSFET is frequently used in portable electronics, consumer electronics, and industrial control systems where low voltage operation, energy efficiency, and small size are critical requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6433 $57.8970
220+ $0.5278 $116.1160
340+ $0.5117 $173.9780
470+ $0.4955 $232.8850
605+ $0.4782 $289.3110
810+ $0.4297 $348.0570
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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