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ZXMC3A18DN8

Part No ZXMC3A18DN8
Manufacturer Zetex Semiconductors
Catalog Transistors - FETs, MOSFETs - RF
Description COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
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Rohs State rohs
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Manufacturer Zetex Semiconductors
Win Source Part Number 1283412-ZXMC3A18DN8
Manufacturer Homepage www.diodes.com/
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Description

The ZXMC3A18DN8 is a dual N-channel enhancement mode MOSFET from Zetex Semiconductors (now part of Diodes Incorporated), designed for low voltage, high-speed switching applications.

Applications

  • Load switching
  • Power management
  • DC-DC converters
  • Battery charging circuits
  • Portable devices

Features

  • Dual N-Channel MOSFET: Contains two independent MOSFETs in a single package.
  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Low Gate Threshold Voltage (VGS(th)): Enables operation at low voltages.
  • Fast Switching Speed: Allows for high-frequency operation.
  • Small Surface Mount Package: Facilitates compact circuit designs.

Benefits

  • Improved Efficiency: Low on-resistance reduces power dissipation in switching applications.
  • Extended Battery Life: Low gate threshold voltage allows for efficient operation in low-voltage systems.
  • Reduced Component Count: Dual MOSFET design reduces the number of components required.
  • Compact Design: Small surface mount package enables high-density circuit layouts.
  • Fast Switching: Enhances performance in high-frequency applications.

Additional Details

The ZXMC3A18DN8 typically features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of up to 2.6A per channel. The on-resistance (RDS(on)) is very low, typically around 65 mΩ at VGS = 4.5V. The gate threshold voltage (VGS(th)) is typically around 1V. It is commonly packaged in a small 8-pin SOIC or DFN package. The operating junction temperature range is usually between -55°C to +150°C. The fast switching speed is achieved through low gate charge and capacitances.

When using the ZXMC3A18DN8, it is essential to consider the thermal characteristics to ensure proper heat dissipation, especially at higher currents. Proper gate driving techniques should be employed to minimize switching losses. The dual MOSFET configuration allows for versatile circuit designs, such as half-bridge configurations or independent switching applications. Consult the datasheet for detailed specifications and application recommendations to ensure optimal performance and reliability.

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