The AP9997BGJ-HF is an N-Channel enhancement mode power MOSFET from Advanced Power Electronics Corp. (APEC). It is designed for high-efficiency switching applications. The -HF suffix indicates that the device is Halogen-Free.

Applications

• DC-DC Converters
• Power Management in Portable Devices
• Load Switching
• Motor Control
• LED Lighting

Features

• Low RDS(ON) for reduced power loss
• Logic Level Gate Drive
• Surface Mount Package
• Halogen-Free
• Fast Switching Speed

Benefits

• Increased Efficiency, Lower Heat Dissipation
• Simplified Circuit Design
• Reduced Board Space
• Environmentally Friendly
• Improved System Performance

Typical specifications include Drain-Source Voltage (VDS) of 30V. Gate-Source Voltage (VGS) of +/- 20V. The continuous Drain Current (ID) depends on the package and thermal conditions, but usually ranges from 7A to 10A. The RDS(on) is very low, in the range of 10-15 mOhms at VGS = 10V, ensuring low power loss during switching. It usually comes in a PDFN3x3 package. Its logic-level gate drive allows for easy interface with microcontrollers and other control circuits. The Halogen-Free feature means it complies with environmental regulations, making it suitable for green electronics applications.