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AO4613L

Part No AO4613L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Hard To Find
Description Complementary Enhancement Mode Field Effect Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Alpha & Omega Semiconductor Inc.
Win Source Part Number 1144788-AO4613L
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AO4613L CAD Model

Description

The AO4613L is a P-Channel enhancement mode MOSFET from Alpha & Omega Semiconductor. It’s designed for load switching and power management applications requiring efficient and reliable performance.

Applications:

  • Load Switching: Efficiently switches power to various loads in electronic systems.
  • Power Management: Used in power management circuits for portable devices, such as laptops and smartphones.
  • DC-DC Converters: Incorporated into DC-DC converters for voltage regulation.
  • Battery Management Systems: Employed in battery management systems (BMS) for battery charging and discharging control.

Features:

  • Low RDS(ON): Minimizes on-state resistance, reducing power loss and improving efficiency.
  • Low Gate Charge: Features low gate charge (Qg), reducing switching losses and enhancing high-frequency performance.
  • Logic Level Gate Drive: Can be driven directly from logic level signals, simplifying circuit design.
  • Small Footprint: Available in a compact SO-8 package, saving board space.
  • RoHS Compliant: Compliant with RoHS standards, ensuring environmental friendliness.

Benefits:

  • High Efficiency: Low RDS(ON) minimizes power dissipation, resulting in higher efficiency.
  • Fast Switching: Low gate charge enables fast switching, improving system performance.
  • Simplified Design: Logic level gate drive simplifies circuit design and reduces component count.
  • Compact Size: Small SO-8 package allows for high-density designs.
  • Environmentally Friendly: RoHS compliance ensures the product meets environmental regulations.

Technical Specifications:

The AO4613L typically features a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of around -6.5A. The RDS(ON) is typically around 30 mΩ at a gate-source voltage (VGS) of -10V. The gate threshold voltage (VGS(th)) is typically between -1V and -3V. The package is SO-8.

This P-Channel MOSFET is well-suited for applications where efficiency and space are critical. Its low on-resistance and gate charge contribute to enhanced performance and reduced power consumption.

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