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Same model may have multiple batches, images only for reference.
AO5803E Real Image
Same model may have multiple batches, images only for reference.

AO5803E

Part No AO5803E
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.6A SC89-6L
Datasheet
AO5803E Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 800 mOhm @ 600mA, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Input Capacitance 100pF @ 10V
Maximum Power Dissipation 400mW
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 1016827-AO5803E
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian AO5803E CAD Model

Description

The Alpha & Omega Semiconductor Inc. AO5803E is a dual 2 P-Channel FET that is designed to operate in a temperature range of -50°C to 150°C.

  • Package: SC-89-6
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Power Dissipation: 400mW
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Input Capacitance: 100pF @ 10V
  • Maximum Rds On: 800 mOhm @ 600mA, 4.5V

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Quantity Unit Price Ext. Price
75+ $0.8092 $60.6900
175+ $0.6640 $116.2000
270+ $0.6433 $173.6910
375+ $0.6225 $233.4375
480+ $0.6018 $288.8640
645+ $0.5395 $347.9775
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Availability: 43,300 pieces
MOQ: 75 pcs
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