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AOB7S60

Part No AOB7S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description 600V 7A a MOS Power Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Alpha & Omega Semiconductor Inc.
Win Source Part Number 1144905-AOB7S60
Manufacturer Homepage www.aosmd.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOB7S60 CAD Model

Description

The AOB7S60 from Alpha & Omega Semiconductor is a 600V αMOS5 Super Junction MOSFET designed for high-efficiency, high-power applications. It leverages advanced super junction technology to minimize on-resistance (RDS(on)) and gate charge (Qg), resulting in reduced conduction and switching losses. This MOSFET is well-suited for applications requiring high voltage operation, such as power supplies, motor drives, and renewable energy systems.

Applications:

  • Power Factor Correction (PFC)
  • Switch Mode Power Supplies (SMPS)
  • Industrial Motor Drives
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)

Features:

  • 600V Breakdown Voltage
  • Low RDS(on) - Reduces conduction losses for higher efficiency
  • Low Gate Charge (Qg) - Minimizes switching losses
  • Fast Body Diode - Improves efficiency in resonant topologies
  • Robust Avalanche Performance - Enhances reliability in demanding environments
  • αMOS5 Technology - Offers superior performance and efficiency

Benefits:

  • High Efficiency - Reduces power consumption and lowers operating costs
  • Improved Thermal Performance - Minimizes heat generation, simplifying thermal management
  • Enhanced Reliability - Robust design ensures stable and long-term operation
  • Simplified Design - Easy to drive and integrate into existing systems
  • Reduced System Size - High power density allows for smaller and more compact designs

Additional Details:

The AOB7S60 features a drain-source voltage (VDS) rating of 600V and a continuous drain current (ID) rating of 7A. The static drain-source on-resistance (RDS(on)) is typically 0.49 Ohms at VGS = 10V. The total gate charge (Qg) is typically 15 nC. It is available in a TO-263 package, which provides good thermal performance. The fast body diode of this MOSFET reduces reverse recovery time, which is crucial for efficiency in certain power supply topologies.

The AOB7S60's combination of high voltage rating, low RDS(on), and fast switching capabilities makes it a strong choice for demanding power applications. Its robust design and avalanche performance ensure reliable operation even under transient conditions. The αMOS5 technology delivers superior performance and efficiency, making the AOB7S60 a valuable component in modern power conversion systems.

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