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Same model may have multiple batches, images only for reference.
AOC2412 Real Image
Same model may have multiple batches, images only for reference.

AOC2412

Part No AOC2412
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4.5A 4WLCSP
Datasheet
AOC2412 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 32nC @ 4.5V
Max Input Capacitance 1842pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 550mW (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 1.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-AlphaDFN (1.57x1.57)
Dimension 4-SMD, No Lead
Win Source Part Number 1016897-AOC2412
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOC2412 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a N-Channel polarity electronic component with a Drain-Source Breakdown Voltage of 20V and a Continuous Drain Current @ 25°C of 4.5A (Ta).

  • Max Gate Charge: 32nC @ 4.5V
  • Max Input Capacitance: 1842pF @ 10V
  • Maximum Rds On @ Id,Vgs: 23 mOhm @ 1.5A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Reel - TR
  • Mounting: SMD (SMT) technology
  • Category: Discrete Semiconductor Products
  • Power Dissipation (Max): 550mW (Ta)
  • Status: obsolete (EOL)
  • Popularity: Medium

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