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Same model may have multiple batches, images only for reference.
AOI1N60 Real Image
Same model may have multiple batches, images only for reference.

AOI1N60

Part No AOI1N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.3A TO251A
Datasheet
AOI1N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 9 Ohm @ 650mA, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251A
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1016946-AOI1N60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOI1N60 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance electronic component that operates on N-Channel polarity.

  • Polarity: N-Channel
  • Power Dissipation: 45W (Tc)
  • Drive Voltage: 10V
  • Mounting: Through-Hole
  • Package: TO-251-3 Stub Leads, IPak
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 8nC @ 10V
  • Maximum Input Capacitance: 160pF @ 25V
  • Maximum Rds On: 9 Ohm @ 650mA, 10V

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