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Same model may have multiple batches, images only for reference.
AOI468 Real Image
Same model may have multiple batches, images only for reference.

AOI468

Part No AOI468
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 300V 11.5A TO252
Datasheet
AOI468 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 6A, 10V
Temperature Range - Operating -50°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251A
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1016953-AOI468
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOI468 CAD Model

Description

The AOI468 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Alpha & Omega Semiconductor Inc.

  • Designed for: use in a variety of applications such as switching power supplies, DC-DC converters, and motor controls.
  • Maximum Power Dissipation: 150W (Tc)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current @ 25°C: 11.5A (Tc)
  • Maximum Rds On @ Id, Vgs: 420 mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 790pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-251A package with TO-251-3 stub leads, IPak.

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