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Same model may have multiple batches, images only for reference.
AOK9N90 Real Image
Same model may have multiple batches, images only for reference.

AOK9N90

Part No AOK9N90
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 9A TO247
Datasheet
AOK9N90 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 2560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 368W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1016983-AOK9N90
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOK9N90 CAD Model

Description

The AOK9N90 is an N-channel MOSFET with a TO-247-3 package produced by Alpha & Omega Semiconductor Inc.

  • Package: TO-247-3
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 9A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 1.3 Ohm @ 4.5A, 10V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 58nC @ 10V
  • Maximum Input Capacitance: 2560pF @ 25V
  • Mounting: through-hole
  • Packaging: tube/rail
  • Supply and Demand Status: sufficient
  • Status: active
  • Operating Temperature Range: -55°C to 150°C (TJ)

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26+ $4.4468 $115.6168
41+ $4.3078 $176.6198
56+ $4.1689 $233.4584
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96+ $3.6130 $346.8480
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