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Same model may have multiple batches, images only for reference.
AON6780 Real Image
Same model may have multiple batches, images only for reference.

AON6780

Part No AON6780
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A DFN5X6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 76nC @ 10V
Max Input Capacitance 9600pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.5W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 1.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-DFN (5x6)
Dimension 8-PowerSMD, Flat Leads
Win Source Part Number 199095-AON6780
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AON6780 CAD Model

Description

Product Overview

The AON6780 is a high-capacitance, high-current N-channel MOSFET that is designed to control power efficiently in electronic circuits. Especially suitable for high-frequency applications, this component offers excellent switching performance.

Applications

  • RF amplifiers
  • Pulse-width modulated systems
  • Power distribution networks
  • Electric vehicle power management

Features and Benefits

  • High-speed operation with low switching losses
  • Durable design for enhanced longevity
  • Lithium-ion battery compatibility
  • Reduced thermal resistance for cooler operation

Discover the efficiency and reliability of the AON6780 for cutting-edge power management applications.

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