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Same model may have multiple batches, images only for reference.
AOT11S60L Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOT11S60L

Part No AOT11S60L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220
Datasheet
AOT11S60L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.1V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 545pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 178W (Tc)
Maximum Rds On at Id,Vgs 399 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017170-AOT11S60L
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian AOT11S60L CAD Model

Description

The AOT11S60L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 11A @ 25°C
  • Maximum Rds On @ Id, Vgs: 399 mOhm @ 3.8A, 10V
  • Gate-Source Threshold Voltage: 4.1V @ 250μA
  • Maximum Gate Charge: 11nC @ 10V
  • Applications: power supplies, motor control, and lighting
  • Package: TO-220
  • Power Dissipation: 178W (Tc)
  • Pack Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7933 $62.7655
80+ $1.4715 $117.7200
125+ $1.4255 $178.1875
170+ $1.3795 $234.5150
220+ $1.3335 $293.3700
290+ $1.1956 $346.7240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 89,500 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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