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AOT12N60FD

Name: AOT12N60FD
Brand: Alpha & Omega Semiconductor Inc.
SKU: 415673
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	AOT12N60FD
Manufacturer	Alpha & Omega Semiconductor Inc.
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 12A TO220
Datasheet	AOT12N60FD Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Alpha & Omega Semiconductor Inc.
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	600V
Continuous Drain Current at 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	50nC @ 10V
Max Input Capacitance	2010pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	278W (Tc)
Maximum Rds On at Id,Vgs	650 mOhm @ 6A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-220
Dimension	TO-220-3
Win Source Part Number	1001389-AOT12N60FD
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian AOT12N60FD CAD Model

Description

The Alpha & Omega Semiconductor Inc. It is a balanced supply and demand status product.

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1001389-AOT12N60FD
Mounting: Through-hole
Maximum Power Dissipation: 278W (Tc)
Packaging: TO-220
Dimensions: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current: 12A (Tc) @ 25°C
Maximum Rds On: 650 mOhm @ 6A, 10V
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 50nC @ 10V
Maximum Input Capacitance: 2010pF @ 25V

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