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AOT15S65L

Part No AOT15S65L
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17.2nC @ 10V
Max Input Capacitance 841pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1017180-AOT15S65L
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian AOT15S65L CAD Model

Description

The 1017180-AOT15S65L is a MOSFET product manufactured by Alpha & Omega Semiconductor Inc.

  • Supply and Demand Status: Sufficient
  • Package Quantity: 1k pcs
  • Case: TO-220
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 15A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 17.2nC @ 10V
  • Maximum Rds On at Id,Vgs: 290 mOhm @ 7.5A, 10V

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