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AOTF7S65

Part No AOTF7S65
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A TO220F
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 9.2nC @ 10V
Max Input Capacitance 434pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Win Source Part Number 1017288-AOTF7S65
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AOTF7S65 CAD Model

Description

The Alpha & Omega Semiconductor Inc. MOSFET is a high-performance N-Channel polarity component that can handle a maximum power dissipation of 35W (Tc) and continuous drain current of 7A (Tc) at 25°C.

  • Polarity: N-Channel
  • Power Dissipation: 35W (Tc)
  • Continuous Drain Current: 7A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 650V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-220-3F
  • Maximum Rds On at Id,Vgs: 650 mOhm @ 3.5A, 10V
  • Supply and demand status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2125 $51.0000
575+ $0.1744 $100.2800
890+ $0.1689 $150.3210
1,225+ $0.1635 $200.2875
1,585+ $0.1580 $250.4300
2,120+ $0.1417 $300.4040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,460 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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