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Same model may have multiple batches, images only for reference.
AOU3N60 Real Image
Same model may have multiple batches, images only for reference.

AOU3N60

Part No AOU3N60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.5A IPAK
Datasheet
AOU3N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 56.8W (Tc)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 1.25A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1017293-AOU3N60
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AOU3N60 CAD Model

Description

The AOU3N60 is a power MOSFET manufactured by Alpha & Omega Semiconductor Inc.

  • Type: Active electronic component
  • Application: Discrete semiconductor products
  • Maximum Power Dissipation: 56.8W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 2.5A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Operating Temperature Range: -50°C to 150°C (TJ)
  • Package: TO-251-3 (short leads, IPak, and TO-251AA dimensions)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 3.5 Ohm @ 1.25A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5631 $59.1255
250+ $0.4620 $115.5000
390+ $0.4476 $174.5640
535+ $0.4331 $231.7085
690+ $0.4187 $288.9030
925+ $0.3754 $347.2450
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Availability: 15,000 pieces
MOQ: 105 pcs
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