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Same model may have multiple batches, images only for reference.
AOW15S60 Alpha & Omega Semiconductor Inc.
Same model may have multiple batches, images only for reference.

AOW15S60

Part No AOW15S60
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO262
Datasheet
AOW15S60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.8V @ 250μA
Max Gate Charge 15.6nC @ 10V
Max Input Capacitance 717pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1017308-AOW15S60
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AOW15S60 CAD Model

Description

The Alpha & Omega Semiconductor AOW15S60 is an N-Channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 15A (Tc).

  • Manufacturer: Alpha & Omega Semiconductor
  • Product Name: AOW15S60
  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 15A (Tc)
  • Gate-Source Threshold Voltage: 3.8V @ 250μA
  • Rds On (Max) @ Id,Vgs: 290 mOhm @ 7.5A, 10V
  • Power Dissipation: 208W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C
  • Package: TO-262

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