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HMC410MS8GETR

Part No HMC410MS8GETR
Manufacturer Analog Devices Inc.
Catalog RF Mixers
Description Up/Down Conv Mixer 15GHz 8-Pin MSOP EP T/R / IC MIXER DBL-BAL LO AMP 8MSOP
Datasheet
Sample
Rohs State rohs
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Categories RF/IF and RFID
Manufacturer Analog Devices Inc.
Packaging Reel - TR
Status Obsolete(EOL)
RF Type VSAT
Frequency 9GHz to 15GHz
Number of Mixers 1
Noise Figure 8dB
Case / Package 8-MSOPG
Win Source Part Number 204877-HMC410MS8GETR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name HMC410
ECCN EAR99
Country of Origin Taiwan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian HMC410MS8GETR CAD Model

Description

Introducing the HMC410MS8GETR from Analog Devices Inc.

The HMC410MS8GETR is a high-performance, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifier. Designed and manufactured by Analog Devices Inc., a leader in the semiconductor industry, this product is engineered to deliver exceptional performance in a wide range of RF and microwave applications.

This power amplifier is housed in a compact, surface-mount MSOP8 package, which is both space-efficient and suitable for high-density circuit designs. It operates within the frequency range of DC to 6 GHz, making it versatile for various applications, including point-to-point radios, VSAT, military & space, and fiber optics.

With its excellent gain and output power characteristics, the HMC410MS8GETR is designed to maintain signal fidelity while amplifying RF signals. The amplifier boasts a high gain of 11 dB, which allows it to boost weak signals effectively without significant noise addition. Moreover, it delivers a solid output power of 22 dBm at 1 dB compression point, ensuring that the signal remains strong and clear over long distances or through various transmission mediums.

The HMC410MS8GETR also features a robust power-added efficiency (PAE) of 55%, which is crucial for applications that demand energy efficiency, such as portable and battery-operated devices. This efficiency reduces the overall power consumption of the system, leading to longer operation times and reduced heat generation.

Designed with reliability in mind, the HMC410MS8GETR is fabricated using Analog Devices' mature and proven pHEMT process, ensuring consistent performance and durability. It also incorporates on-chip matching networks that facilitate easy integration into a wide range of RF and microwave systems without the need for complex external circuits.

Whether you're designing for commercial communication systems or rugged military environments, the HMC410MS8GETR from Analog Devices Inc. offers a blend of performance, efficiency, and reliability, making it an excellent choice for your power amplification needs.

To learn more about this product, access datasheets, or place an order, visit the Analog Devices Inc. website or contact your local distributor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.1136 $60.5680
12+ $9.9399 $119.2788
18+ $9.6292 $173.3256
25+ $9.3185 $232.9625
33+ $9.0078 $297.2574
43+ $8.0758 $347.2594
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,510 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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