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Same model may have multiple batches, images only for reference.
NE68719-T1 CEL
Same model may have multiple batches, images only for reference.

NE68719-T1

Part No NE68719-T1
Manufacturer CEL
Catalog RF Transistors (BJT)
Description TRANS NPN 2GHZ SMD
Datasheet
NE68719-T1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 3V
Frequency - Transition 11GHz
Noise Figure (dB Typ @ f) 1.3dB to 2dB @ 2GHz
Maximum Power Dissipation 90mW
Typical Gain (hFE) (Min) 70 @ 20mA, 2V
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-SuperMiniMold (19)
Win Source Part Number 1082926-NE68719-T1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NE68719-T1 CAD Model

Description

The NE68719-T1 from CEL is an NPN transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 3V
  • Maximum Current Collector: 30mA
  • Typical Gain: 70 @ 20mA and 2V
  • Noise Figure: 1.3dB to 2dB @ 2GHz
  • Frequency Transition: 11GHz
  • Case/Package: 3-SuperMiniMold (19)
  • Maximum Power Dissipation: 90mW
  • Application: Low Noise Amplifier
  • Status: Obsolete (EOL)

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