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UPA806T-T1-A

Part No UPA806T-T1-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF DUAL TRANSISTORS NPN SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 6V
Frequency - Transition 12GHz
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz
Gain 8.5dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 75 @ 10mA, 3V
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 1116524-UPA806T-T1-A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian UPA806T-T1-A CAD Model

Description

The UPA806T-T1-A is a dual NPN transistor offered by CEL. It has a gain of 8.5dB and a transition frequency of 12GHz.

  • Noise Figure: 1.5dB @ 2GHz
  • Packaging: Reel - TR
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Mounting: SMD (SMT)
  • Temperature Range: 150°C (TJ)
  • Case / Package: SOT-363
  • Maximum Current Collector: 30mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
  • Typical Gain (hFE) (Min): 75 @ 10mA, 3V
  • Maximum Power Dissipation: 200mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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Availability: 907 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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