The CJD117 is a silicon NPN transistor manufactured by Central Semiconductor Corp. This transistor was commonly used for amplification and switching applications in various electronic circuits. It is now designated as END-OF-LIFE.

Applications

• Low-noise amplifiers.
• Switching circuits.
• General-purpose amplification.
• Oscillator circuits.

Features

• NPN Silicon Transistor: A standard NPN bipolar junction transistor.
• Low Noise Figure: Suitable for sensitive amplifier stages.
• High Gain: Provides significant signal amplification.
• Compact Package: Designed for efficient use of board space.

Benefits

• Improved Signal Quality: Minimizes noise in amplified signals.
• Efficient Switching: Enables fast and reliable switching operations.
• Versatile Amplification: Can be used in a variety of amplifier configurations.
• Space-Saving Design: Allows for compact circuit layouts.

Specifications

Typical specifications include:

• Collector-Emitter Voltage (Vceo): The maximum voltage that can be applied between the collector and emitter without causing breakdown.
• Collector Current (Ic): The maximum current that can flow through the collector.
• Power Dissipation (Pd): The maximum power the transistor can dissipate without damage.
• Current Gain (hFE): The ratio of collector current to base current, indicating the transistor's amplification capability.
• Transition Frequency (fT): The frequency at which the current gain drops to unity.

Note: Given its END-OF-LIFE status, it's essential to consider alternative components for new designs.