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Same model may have multiple batches, images only for reference.
CMS04N06Y-HF Real Image
Same model may have multiple batches, images only for reference.

CMS04N06Y-HF

Part No CMS04N06Y-HF
Manufacturer Comchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 4A SOT223 / N-Channel 60 V 4A (Ta) 3.1W (Ta) Surface Mount SOT-223
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Comchip Technology
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 15 V
Power Dissipation (Max) 3.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Base Product Number CMS04
Standard Package 2,500
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339047-CMS04N06Y-HF
Ultra Librarian 3D Model Ultra Librarian CMS04N06Y-HF CAD Model

Description

The CMS04N06Y-HF is an N-channel MOSFET from Comchip Technology.

  • Package: TO-261-4, TO-261AA
  • Application: Discrete Semiconductor Products
  • Drain to Source Voltage: 60 V
  • Power Dissipation: 3.1 W (Ta)
  • Gate-Source Voltage: ±20 V
  • Continuous Drain Current: 4 A (Ta)
  • Rds On (Max): 100mOhm @ 3A, 10V
  • Gate Charge (Qg) (Max): 5.1 nC @ 4.5 V
  • Package: Tape and Reel
  • Quantity per Package: 2,500 pcs

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