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C2M0045170D

Part No C2M0045170D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1700V 72A TO247-3 / N-Channel 1700 V 72A (Tc) 520W (Tc) Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 70mOhm @ 50A, 20V
Vgs(th) (Max) @ Id 4V @ 18mA
Gate Charge (Qg) (Max) @ Vgs 188 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3672 pF @ 1000 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-3
Case / Package TO-247-3
Base Product Number C2M0045170
RoHS Status RoHS Compliant
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -3312-C2M0045170D
Standard Package 30
Win Source Part Number 1325241-C2M0045170D
Ultra Librarian 3D Model Ultra Librarian C2M0045170D CAD Model

Description

The C2M0045170D is a N-Channel SiCFET (Silicon Carbide) Transistor manufactured by Wolfspeed, Inc.

  • Drain to Source Voltage: 1700 V
  • Continuous Drain Current: 72A (Tc)
  • Rds On: 70mOhm @ 50A, 20V
  • Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3672 pF @ 1000 V
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Package: TO-247-3 case
  • RoHS Compliant: Yes
  • Ideal for Use: in Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $40.2015 $80.4030
4+ $32.9859 $131.9436
5+ $31.9551 $159.7755
7+ $30.9243 $216.4701
9+ $29.8935 $269.0415
12+ $26.8010 $321.6120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 450 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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