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C2M0160120D Real Image C2M0160120D real image15239
Same model may have multiple batches, images only for reference.
C2M0160120D Real Image C2M0160120D real image15239
C2M0160120D Real Image C2M0160120D real image15239
Same model may have multiple batches, images only for reference.

C2M0160120D

Part No C2M0160120D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH SiC 1.2KV 18A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 1200V 19A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Cree/Wolfspeed
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology SiCFET (Silicon Carbide)
Drain-Source Breakdown Voltage 1200V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Gate-Source Threshold Voltage 2.5V @ 500μA
Max Gate Charge 32.6nC @ 20V
Max Input Capacitance 527pF @ 800V
Maximum Gate-Source Voltage +25V, -10V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 196 mOhm @ 10A, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1027138-C2M0160120D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name C2M0160120D
Introduction Date September 02, 2015
ECCN ERA99
Country of Origin China, Philippines, United States of America
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian C2M0160120D CAD Model

Description

The C2M0160120D is a N-Channel SiCFET (Silicon Carbide) Transistor manufactured by Cree/Wolfspeed.

  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 19A (Tc)
  • Rds On: 196 mOhm @ 10A, 20V
  • Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 800V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-247-3 case
  • Ideal for Use: Discrete Semiconductor Products

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23+ $9.0638 $208.4674
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36+ $8.3823 $301.7628
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