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Same model may have multiple batches, images only for reference.
C2M1000170D Real Image
Same model may have multiple batches, images only for reference.

C2M1000170D

Part No C2M1000170D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
C2M1000170D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Wolfspeed, Inc.
Series Z-FET™
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 191 pF @ 1000 V
Power Dissipation (Max) 69W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number C2M1000170
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277484-C2M1000170D
Ultra Librarian 3D Model Ultra Librarian C2M1000170D CAD Model

Description

The C2M1000170D from Wolfspeed, Inc. is an N-channel SiCFET with a high voltage rating of 1700V.

  • Maximum Continuous Drain Current @ 25°C: 4.9A
  • Maximum Rds On @ 2A and 20V: 1.1Ω

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.9612 $53.7672
12+ $8.3941 $100.7292
19+ $8.1105 $154.0995
27+ $7.5433 $203.6691
35+ $7.2598 $254.0930
44+ $6.9762 $306.9528
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Availability: 5,500 pieces
MOQ: 6 pcs
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