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JANS2N3810U/TR

Part No JANS2N3810U/TR
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Arrays
Description TRANSISTOR DUAL SMALL-SIGNAL BJT  /  Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Surface Mount 6-SMD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Microchip Technology
Series Military, MIL-PRF-19500/336
Package Tape & Reel (TR)
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
Power - Max 350mW
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting SMD (SMT)
Package / Case 6-SMD, No Lead
Supplier Device Package 6-SMD
ECCN EAR99
HTSUS 8541.21.0095
Other Names 150-JANS2N3810U/TR
Standard Package 1
Win Source Part Number 1206076-JANS2N3810U/TR
Ultra Librarian 3D Model Ultra Librarian JANS2N3810U/TR CAD Model

Description

Product Overview: JANS2N3810U/TR by Microchip Technology

The JANS2N3810U/TR is a high-reliability, N-channel Power Field-Effect Transistor (FET) manufactured by Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions. This product is specifically designed to meet the stringent requirements of aerospace and defense applications, ensuring optimal performance in extreme conditions.

Key Features

  • Quality and Reliability: Qualified to MIL-PRF-19500/543 specifications, the JANS2N3810U/TR guarantees the highest level of quality and reliability for critical mission applications.
  • High Power Efficiency: With its advanced power MOSFET technology, this component offers low on-state resistance, leading to high efficiency and reduced power losses in electronic circuits.
  • Radiation Hardened: The device is engineered to withstand radiation effects, making it suitable for space and satellite applications where exposure to radiation is a concern.
  • Extended Temperature Range: It operates over a wide military temperature range, ensuring consistent performance under varying environmental conditions.
  • Hermetically Sealed: The transistor is encapsulated in a hermetic package, providing protection against moisture and contaminants.

Applications

The JANS2N3810U/TR is ideal for a variety of high-reliability applications, including:

  • Power supply systems in aerospace and defense electronics
  • Switching applications requiring high-speed and low-drive power
  • Motor control circuits in rugged environments
  • Linear and switching voltage regulators

Product Specifications

The JANS2N3810U/TR features include:

  • Drain-Source Voltage (Vdss): Up to 100V
  • Continuous Drain Current (Id): High capacity
  • Gate-Source Voltage (Vgs): ±20V
  • Low Total Gate Charge
  • Fast Switching Speed

In summary, the JANS2N3810U/TR from Microchip Technology is a robust, radiation-hardened N-channel FET that offers superior performance for the most demanding aerospace and defense applications. Its combination of high-quality construction, efficiency, and reliability makes it a preferred choice for engineers looking for components that can withstand the rigors of extreme environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5523 $58.2092
9+ $11.9403 $107.4627
13+ $11.5672 $150.3736
18+ $11.1941 $201.4938
24+ $10.8209 $259.7016
31+ $9.7015 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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