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2N5401CYTA

Part No 2N5401CYTA
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 150V 0.6A TO92-3  /  Bipolar (BJT) Transistor PNP 150 V 600 mA 400MHz 625 mW Through Hole TO-92-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 600 mA
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Power - Max 625 mW
Frequency - Transition 400MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3
Base Product Number 2N5401
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 2,000
Win Source Part Number 967885-2N5401CYTA
Ultra Librarian 3D Model Ultra Librarian 2N5401CYTA CAD Model

Description

ON Semiconductor 2N5401CYTA PNP Bipolar Transistor

The 2N5401CYTA from ON Semiconductor is a high-quality PNP bipolar transistor designed for general-purpose amplifier and switching applications. This versatile component is a crucial part of many electronic circuits, offering reliable performance and consistent quality that engineers and hobbyists have come to expect from ON Semiconductor products.

This transistor features a collector-emitter voltage (VCEO) of 150V, which ensures that it can handle moderate power levels in a variety of circuits. With a collector current of up to 600 mA, the 2N5401CYTA is capable of driving moderate loads, making it suitable for a wide range of applications. Additionally, the device boasts a collector-base voltage (VCBO) of 160V and an emitter-base voltage (VEBO) of 5V, providing a good safety margin for many electronic designs.

The 2N5401CYTA comes in a TO-92 package, which is a widely used and easily mountable package type. This makes it convenient for prototyping, as well as for final production in printed circuit boards (PCBs). The TO-92 package also allows for adequate heat dissipation, ensuring that the transistor operates within its specified temperature range for optimal performance and longevity.

ON Semiconductor has designed the 2N5401CYTA with a high current gain bandwidth product (fT) of 300 MHz, which means it can be used effectively in high-frequency applications or in situations where a quick response is required. The high input impedance makes it a good choice for amplifying weak signals without loading down the signal source.

For ease of implementation, the 2N5401CYTA also features low noise figures, making it an excellent choice for audio amplifiers and signal processing equipment where maintaining signal integrity is crucial. Its robust construction ensures that it can withstand the rigors of both industrial and consumer applications, while its compliance with RoHS standards means it meets current environmental requirements for electronic components.

In summary, the 2N5401CYTA PNP bipolar transistor from ON Semiconductor is a reliable and versatile component that is well-suited for a variety of electronic applications, from simple amplifiers to complex switching circuits. Its performance characteristics and package design make it a go-to choice for designers looking for a balance between functionality and ease of use.

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