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C3M0160120D

Part No C3M0160120D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 17A TO247-3 / N-Channel 1200 V 17A (Tc) 97W (Tc) Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 208mOhm @ 8.5A, 15V
Vgs(th) (Max) @ Id 3.6V @ 2.33mA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 632 pF @ 1000 V
Power Dissipation (Max) 97W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-3
Case / Package TO-247-3
Base Product Number C3M0160120
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 1697-C3M0160120D
Standard Package 30
Win Source Part Number 1325250-C3M0160120D
Ultra Librarian 3D Model Ultra Librarian C3M0160120D CAD Model

Description

The Wolfspeed, Inc. SiCFET (Silicon Carbide) N-Channel FET is a high voltage, high current power MOSFET designed for use in applications such as electric vehicles, renewable energy systems, and industrial motor drives.

  • Drain to Source Voltage (Vdss): 1200 V
  • Continuous Drain Current (Id): 17A @ 25°C
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 15 V
  • Package: TO-247-3 package
  • Mounting: through hole
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.7096 $58.2576
13+ $7.9668 $103.5684
20+ $7.7179 $154.3580
27+ $7.4689 $201.6603
35+ $7.2199 $252.6965
47+ $6.4731 $304.2357
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,205 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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