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Same model may have multiple batches, images only for reference.
E3M0075120K Cree/Wolfspeed
Same model may have multiple batches, images only for reference.

E3M0075120K

Part No E3M0075120K
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description 1200V AUTOMOTIVE SIC 75MOHM FET / N-Channel 1200 V 32A (Tc) 145W (Tc) Through Hole TO-247-4L
Datasheet
E3M0075120K Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Wolfspeed, Inc.
Series E-Series, Automotive
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 97.5mOhm @ 17.9A, 15V
Vgs(th) (Max) @ Id 3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 145W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1356079-E3M0075120K
Ultra Librarian 3D Model Ultra Librarian E3M0075120K CAD Model

Description

The E3M0075120K is a N-Channel MOSFET from Wolfspeed, Inc..

  • Type: SiCFET (Silicon Carbide)
  • Drain to Source Voltage: 1200V
  • Continuous Drain Current: 32A
  • Rds On: 97.5mOhm @ 17.9A and 15V
  • Gate Threshold Voltage: 3.6V @ 5mA
  • Gate Charge: 55nC @ 15V
  • Power Dissipation: 145W
  • Operating Temperature: Up to 175°C
  • Package: TO-247-4

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.5982 $58.3928
9+ $11.9780 $107.8020
13+ $11.6037 $150.8481
18+ $11.2294 $202.1292
24+ $10.8551 $260.5224
31+ $9.7321 $301.6951
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Availability: 3,000 pieces
MOQ: 4 pcs
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