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Same model may have multiple batches, images only for reference.
CY7C1370DV25-200BZI Cypress Semiconductor Corp
Same model may have multiple batches, images only for reference.

CY7C1370DV25-200BZI

Part No CY7C1370DV25-200BZI
Manufacturer Cypress Semiconductor Corp
Catalog Memory
Description IC SRAM 18MBIT PARALLEL 165FBGA / SRAM - Synchronous, SDR Memory IC 18Mbit Parallel 200 MHz 3 ns 165-FBGA (13x15)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Cypress Semiconductor Corp
Series NoBL™
Package Bulk
Product Status Active
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR
Memory Size 18Mbit
Memory Organization 512K x 36
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page -
Access Time 3 ns
Voltage - Supply 2.375V ~ 2.625V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 165-LBGA
Supplier Device Package 165-FBGA (13x15)
Base Product Number CY7C1370
MSL Level 3 (168 Hours)
REACH Status REACH Affected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 1355720-CY7C1370DV25-200BZI
Ultra Librarian 3D Model Ultra Librarian CY7C1370DV25-200BZI CAD Model

Description

The CY7C1370DV25-200BZI is a high-performance synchronous SRAM IC manufactured by Cypress Semiconductor Corp.

  • Series: NoBL™
  • Memory Size: 18Mbit
  • Memory Organization: 512K x 36
  • Voltage Supply: 2.375V to 2.625V
  • Temperature Range: -40°C to 85°C
  • Package: 165-LBGA
  • Mounting Type: Surface Mount
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz

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Availability: 1,191 pieces
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