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S34ML08G301TFI100

Part No S34ML08G301TFI100
Manufacturer Cypress Semiconductor Corp
Catalog OEM Parts ( S )
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 972595-S34ML08G301TFI100
Categories OEM Parts( S )
Manufacturer Cypress Semiconductor Corp
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian S34ML08G301TFI100 CAD Model

Description

The S34ML08G301TFI100 is an 8-Gigabit (1Gx8) SLC NAND Flash memory device manufactured by Cypress Semiconductor Corp. This type of non-volatile memory is commonly used for data storage in a wide array of embedded systems and consumer electronics. SLC (Single-Level Cell) NAND Flash offers high endurance and data retention compared to MLC (Multi-Level Cell) or TLC (Triple-Level Cell) NAND Flash, making it suitable for applications requiring frequent write/erase cycles and long-term data storage.

Applications:

  • Embedded systems for boot code storage
  • Industrial control systems for data logging
  • Networking equipment for configuration storage
  • Solid-state drives (SSDs) for cache memory
  • Automotive infotainment systems for map data

Features:

  • 8-Gigabit (1Gx8) capacity for ample storage space.
  • SLC NAND Flash technology for high endurance and data retention.
  • Page size of 2KB + 64B spare area for efficient data management.
  • Asynchronous interface for simplified system integration.
  • Operating voltage of 3.3V for low power consumption.

Benefits:

  • Reliable data storage for critical applications.
  • Long product lifespan due to high endurance.
  • Fast read/write speeds for quick data access.
  • Low power consumption for energy-efficient systems.
  • Simplified system design due to asynchronous interface.

Additional Details:

The TFI100 in the part number likely refers to the package type and temperature grade. It's crucial to consult the Cypress Semiconductor Corp datasheet for precise details, including the operating temperature range, endurance ratings (program/erase cycles), data retention specifications, and timing characteristics. Proper error correction code (ECC) implementation is essential to ensure data integrity in NAND Flash memory systems. The datasheet will provide recommendations for ECC algorithms and implementation strategies. Furthermore, understanding the block management scheme, wear leveling algorithms, and bad block management is critical for maximizing the lifespan and reliability of the S34ML08G301TFI100 in your specific application. Refer to the official documentation for complete and accurate information.

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