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2DC4617R-7

Part No 2DC4617R-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.15A SOT-523
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Cut Tape (CT)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 150mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) at Ib, Ic 400mV at 5mA, 50mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 180 at 1mA, 6V
Maximum Power 150mW
Frequency - Transition 180MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package SOT-523
Supplier Device Package SOT-523
Family Part Number 2DC4617
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 713048-2DC4617R-7
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DC4617R-7 CAD Model

Description

Product Overview: 2DC4617R-7 from Diodes Incorporated

The 2DC4617R-7 is a high-performance PNP bipolar transistor designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is specifically engineered to meet the needs of modern electronic applications that require low power consumption and high efficiency.

Key Features

  • Transistor Polarity: PNP - This indicates that the transistor uses holes as the majority charge carriers and is commonly used in amplifying or switching applications.
  • Collector-Emitter Voltage (VCEO): 50V - The maximum voltage that can be applied from the collector to the emitter while the base is open-circuited. This high breakdown voltage makes it suitable for a variety of applications.
  • Collector Current (IC): 150mA - The maximum continuous current that can flow through the collector of the transistor, which is sufficient for small signal amplification.
  • Power Dissipation (Pd): 350mW - The maximum power the transistor can dissipate without exceeding the maximum junction temperature, ensuring reliability and longevity.
  • DC Current Gain (hFE): 160 to 400 - This range of current gain indicates the transistor's efficiency in amplifying the input signal.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - A wide temperature range that ensures stable operation under various environmental conditions.
  • Package / Case: SOT-23 - A compact surface-mount package that is ideal for space-constrained applications.

Applications

The 2DC4617R-7 transistor is versatile and can be used in a wide array of electronic circuits. It is commonly found in:

  • Signal amplification circuits
  • Switching applications
  • Power management solutions
  • Consumer electronics
  • Telecommunication devices
  • Automotive modules

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that meet rigorous industry standards. The 2DC4617R-7 transistor is no exception, offering consistent performance and high reliability. It is RoHS compliant, ensuring that it meets the European Union's directive on the restriction of hazardous substances.

For engineers and designers looking for a reliable PNP transistor that offers efficient performance with a compact footprint, the 2DC4617R-7 from Diodes Incorporated is an excellent choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
555+ $0.1044 $57.9420
1,350+ $0.0857 $115.6950
2,090+ $0.0831 $173.6790
2,875+ $0.0804 $231.1500
3,715+ $0.0778 $289.0270
4,980+ $0.0697 $347.1060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,750 pieces
MOQ: 555 pcs
Order Increment : 1 pcs
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