Product Overview: 2N7002E-7-F by Diodes Incorporated

The 2N7002E-7-F is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated. This compact and efficient MOSFET is a fundamental component in modern electronics, offering low on-resistance and a high switching speed, making it suitable for a wide range of applications. The 2N7002E-7-F is particularly well-suited for high-speed switching applications in power management, load switching, and circuit protection.

Key Features

• Device Type: N-Channel MOSFET
• Configuration: Single
• Drain-Source Breakdown Voltage (V<sub>DS): 60V
• Continuous Drain Current (I<sub>D): 115mA
• R<sub>DS(on): Very low on-resistance at 7.5Ω
• Maximum Power Dissipation (P<sub>D): 350mW
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23-3

Applications

The 2N7002E-7-F MOSFET is designed for use in a variety of applications including:

• Power management circuits
• DC/DC converters
• Load switches
• Motor control applications
• Logic level conversion
• Portable devices
• Battery management systems

Quality and Reliability

Diodes Incorporated ensures that the 2N7002E-7-F meets the highest quality and reliability standards. The device is RoHS compliant, reflecting the company's commitment to environmental responsibility. Additionally, it is characterized for operation from -55°C to +150°C, ensuring performance in extreme conditions and making it a reliable choice for industrial and automotive applications.

Availability

The 2N7002E-7-F from Diodes Incorporated is available in a small SOT-23-3 package, providing an excellent solution for space-constrained applications. Its lead-free finish and halogen-free mold compound make it an environmentally conscious choice, adhering to current international regulations for electronic components.

For detailed specifications, datasheets, and technical support, customers are encouraged to contact Diodes Incorporated or visit their official website to ensure they are obtaining the most current and comprehensive information regarding the 2N7002E-7-F MOSFET.