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BC847BS-7-F

Part No BC847BS-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.1A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 400mV @ 5mA, 100mA
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 200mW
Frequency - Transition 100MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 011115-BC847BS-7-F
Family Name BC847BS
Introduction Date April 29, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC847BS-7-F CAD Model

Description

Diodes Incorporated BC847BS-7-F Bipolar Transistor

The BC847BS-7-F from Diodes Incorporated is a high-performance, dual NPN bipolar (BJT) transistor housed in a small surface-mount package, designed to address the needs of a wide range of electronic applications. This bipolar transistor is characterized by its low voltage operation and high current gain, making it an excellent choice for amplification and switching applications in modern electronic circuits.

Key Features:

  • Transistor Type: Dual NPN - The device includes two NPN transistors in a single package, providing design flexibility and saving board space.
  • Package: SOT-363 - A compact surface-mount package that is suitable for high-density PCB designs.
  • Collector-Emitter Voltage (Vceo): 45V - This rating ensures the transistor can handle moderate voltage applications without breakdown.
  • Collector Current (Ic): 100mA - A sufficient current rating for a variety of low to medium power applications.
  • DC Current Gain (hFE): 200 - 400 at 2mA - High current gain indicates efficient current amplification.
  • Transition Frequency (fT): 100MHz - The high transition frequency makes this transistor suitable for applications requiring fast switching.
  • Power Dissipation (Pd): 200mW - Adequate power dissipation rating for many electronic circuits.
  • Operating Temperature Range: -55°C to +150°C - A broad temperature range ensures stability and performance under various environmental conditions.
  • RoHS Compliant: Yes - The product meets the requirements of the Restriction of Hazardous Substances Directive, making it environmentally friendly.

Applications:

The BC847BS-7-F is versatile and can be used in a variety of applications, including:

  • Signal amplification in audio and video equipment
  • Driver stages in audio amplifiers
  • Switching operations in digital circuits
  • Voltage regulation modules
  • General-purpose amplification

With its dual transistor configuration, the BC847BS-7-F is particularly useful in applications where matching characteristics are crucial, such as differential signal processing or push-pull amplifier stages. Its small footprint and high level of integration make it an ideal choice for portable electronics, where space is at a premium, and power efficiency is essential.

Overall, the BC847BS-7-F offers designers a reliable and compact solution for implementing efficient bipolar transistor configurations in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,105+ $0.0238 $50.0990
4,485+ $0.0223 $100.0155
6,945+ $0.0216 $150.0120
10,000+ $0.0200 $200.0000
12,955+ $0.0193 $250.0315
16,220+ $0.0185 $300.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,000 pieces
MOQ: 2105 pcs
Order Increment : 1 pcs
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