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BSS138-7-F

Part No BSS138-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 200MA SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300mW (Ta)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 220mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 012155-BSS138-7-F
Family Name BSS138
Introduction Date October 20, 1997
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS138-7-F CAD Model

Description

Product Overview: BSS138-7-F

The BSS138-7-F is a high-performance N-Channel Logic Level Enhancement Mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This versatile component is well-suited for a wide range of applications, including load switch, power management, and various logic level conversion operations.

Key Features

  • Low On-Resistance: The BSS138-7-F boasts a low on-resistance, which ensures high efficiency and minimal power loss during operation. This characteristic is particularly beneficial in power-sensitive designs.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-speed circuitry, contributing to improved overall performance of electronic devices.
  • Low Input Capacitance: The reduced input capacitance of the BSS138-7-F facilitates faster signal processing, making it an excellent choice for high-frequency applications.
  • Logic Level Gate Drive: This MOSFET can be driven by logic-level voltages, which means it can be easily interfaced with microcontrollers and other logic devices without the need for additional level-shifting components.
  • Surface-Mount Package: Housed in a compact SOT-23 package, the BSS138-7-F is designed for optimal space-saving on printed circuit boards and is compatible with automated assembly processes.

Applications

The BSS138-7-F is a versatile component that finds its place in various electronic circuits including, but not limited to:

  • DC/DC converters
  • Battery management systems
  • Power supply circuits
  • Motor control modules
  • Logic level shifters

Quality and Reliability

Diodes Incorporated is committed to providing products that meet the highest standards of quality and reliability. The BSS138-7-F is no exception, as it undergoes rigorous testing and quality control measures to ensure it meets the stringent requirements of the industry. This commitment to quality ensures that the BSS138-7-F provides reliable performance in a wide range of environmental conditions and applications.

For designers and engineers looking for a reliable and efficient logic level N-Channel MOSFET, the BSS138-7-F from Diodes Incorporated is an excellent choice that combines performance, versatility, and quality in a small form factor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,105+ $0.0238 $50.0990
4,485+ $0.0223 $100.0155
6,945+ $0.0216 $150.0120
10,000+ $0.0200 $200.0000
12,955+ $0.0193 $250.0315
16,220+ $0.0185 $300.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 358,608 pieces
MOQ: 2105 pcs
Order Increment : 1 pcs
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