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DDTC114WE-7-F

Part No DDTC114WE-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 150MW SOT523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 24 @ 10mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package SOT-523
Win Source Part Number 101160-DDTC114WE-7-F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DDTC114WE-7-F CAD Model

Description

Diodes Incorporated DDTC114WE-7-F NPN Pre-Biased Transistor

The DDTC114WE-7-F from Diodes Incorporated is a high-performance, NPN pre-biased transistor that simplifies circuit design by integrating the biasing resistors. This small signal transistor is designed for use in various applications, including switching and amplification in consumer electronics, industrial, and telecommunications equipment.

Key Features

  • Pre-Biased Configuration: Comes with built-in biasing resistors, which reduces component count and simplifies circuit layout.
  • Surface-Mount Package: Encased in a small SOT-323 (SC-70) package, making it suitable for high-density PCB designs.
  • Energy Efficient: Features low saturation voltage and high current gain, which enhances power efficiency in electronic circuits.
  • RoHS Compliant: Manufactured with environmentally friendly materials, complying with RoHS standards for reduced environmental impact.

Electrical Characteristics

  • Collector-Emitter Voltage (Vceo): Capable of withstanding up to 50V, providing a good margin for voltage spikes and surges in circuits.
  • Collector Current (Ic): Supports a continuous collector current of up to 100mA, suitable for driving small loads.
  • Resistor Ratios: Features resistor ratios of R1/R2 = 10KΩ/10KΩ, offering balanced biasing for stable operation.
  • Power Dissipation (Pd): Rated for a maximum power dissipation of 150mW, ensuring reliable performance under typical operating conditions.

Applications

The DDTC114WE-7-F is versatile and can be used in a wide array of applications. Its compact size and integrated bias resistors make it an ideal choice for:

  • Load/relay drivers
  • Logic level shifters
  • Signal processing
  • Power management functions

With its robust design and integrated features, the DDTC114WE-7-F is a practical component for designers looking to optimize their circuit designs with reliable and efficient transistor solutions. Diodes Incorporated's commitment to quality ensures that this pre-biased transistor will meet the rigorous demands of modern electronic devices.

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