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DMC2053UFDBQ-7

Part No DMC2053UFDBQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 8V~24V U-DFN2020-6 / Mosfet Array N and P-Channel 20V 4.6A (Ta), 3.1A (Ta) 820mW (Ta) Surface Mount U-DFN2020-6 (Type B)
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V, 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 369pF @ 10V, 440pF @ 10V
Power - Max 820mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-UDFN Exposed Pad
Supplier Device Package U-DFN2020-6 (Type B)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 31-DMC2053UFDBQ-7TR
Standard Package 3,000
Win Source Part Number 960962-DMC2053UFDBQ-7
Ultra Librarian 3D Model Ultra Librarian DMC2053UFDBQ-7 CAD Model

Description

The DMC2053UFDBQ-7 is a state-of-the-art, dual N-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This high-performance MOSFET is housed in an ultra-compact DFN2020-6 (Type B) package, making it suitable for space-constrained applications where efficiency and thermal performance are critical.

Key Features

  • Low On-Resistance: The device features low on-resistance, which minimizes conduction losses and improves overall efficiency, making it ideal for power management applications.
  • High-Speed Switching: With its fast switching capabilities, the DMC2053UFDBQ-7 is well-suited for high-frequency circuits, reducing switching losses and improving performance in applications such as DC-DC converters.
  • Dual N-Channel Configuration: The dual N-Channel setup allows for design flexibility, enabling the configuration of half-bridge, full-bridge, or push-pull topologies within a single compact package.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, making it compatible with a wide range of drive circuits and logic levels.

Applications

The versatility of the DMC2053UFDBQ-7 makes it suitable for a broad range of applications, including:

  • Power Management
  • Load Switching
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control
  • Computing and Server Applications

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMC2053UFDBQ-7 is built with rigorous quality control standards and is designed to meet or exceed industry standards for reliability and performance. Its robust construction ensures long-term reliability in a variety of operating conditions and environments.

Environmental Compliance

The DMC2053UFDBQ-7 is compliant with RoHS and Green standards, reflecting Diodes Incorporated's dedication to environmental responsibility. This ensures that the product is free from hazardous substances, making it suitable for use in environmentally-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3573 $50.0220
345+ $0.2932 $101.1540
530+ $0.2840 $150.5200
730+ $0.2748 $200.6040
945+ $0.2657 $251.0865
1,260+ $0.2382 $300.1320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,620 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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