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DMC2710UDW-7

Part No DMC2710UDW-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 8V-24V SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel Complementary
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 42pF @ 16V, 49pF @ 16V
Power - Max 290mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number DMC2710
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376911-DMC2710UDW-7
Ultra Librarian 3D Model Ultra Librarian DMC2710UDW-7 CAD Model

Description

Introducing the DMC2710UDW-7 MOSFET from Diodes Incorporated

The DMC2710UDW-7 is a cutting-edge MOSFET device engineered by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product stands out with its remarkable efficiency and reliability, designed to meet the rigorous demands of modern electronic applications.

Key Features

  • Device Type: MOSFET - Metal-Oxide Semiconductor Field-Effect Transistor.
  • Configuration: Dual N-Channel.
  • VDS (Drain-Source Voltage): 20V, providing a good balance between performance and power handling for a variety of applications.
  • ID (Continuous Drain Current): 6.5A, ensuring the MOSFET can handle significant current flow for high-power tasks.
  • RDS(on) (Drain-Source On-Resistance): As low as 20mΩ at VGS = 4.5V, which translates to lower losses and improved efficiency.
  • Package: SOT-363, a compact package that is suitable for space-constrained applications.

Advanced Technology

The DMC2710UDW-7 incorporates advanced trench MOSFET technology, which provides enhanced performance characteristics compared to traditional planar MOSFETs. This technology allows for lower on-resistance and reduced gate charge, leading to faster switching speeds and better thermal performance.

Applications

With its robust design, the DMC2710UDW-7 is ideal for a wide range of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Drives

Quality and Reliability

Diodes Incorporated is known for its commitment to quality and the DMC2710UDW-7 is no exception. This product is built to the highest quality standards, ensuring reliable operation even under challenging conditions. It is RoHS compliant, reflecting the company's dedication to environmental responsibility.

Summary

The DMC2710UDW-7 from Diodes Incorporated represents a superior choice for designers looking for a high-performance, dual N-Channel MOSFET. Its advanced trench technology, low on-resistance, and high current handling capability make it an excellent component for power-efficient designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
610+ $0.0824 $50.2640
1,480+ $0.0676 $100.0480
2,295+ $0.0655 $150.3225
3,155+ $0.0634 $200.0270
4,080+ $0.0613 $250.1040
5,465+ $0.0549 $300.0285
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 138,000 pieces
MOQ: 610 pcs
Order Increment : 1 pcs
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