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DMG1013T-7

Part No DMG1013T-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.46A SOT-523
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 460mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.622nC @ 4.5V
Max Input Capacitance 59.76pF @ 16V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 270mW (Ta)
Maximum Rds On at Id,Vgs 700 mOhm @ 350mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-523
Dimension SOT-523
Win Source Part Number 014371-DMG1013T-7
Family Name DMG1013T
Introduction Date July 08, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG1013T-7 CAD Model

Description

DMG1013T-7 - Diodes Incorporated

The DMG1013T-7 is a high-performance, P-channel enhancement mode Field Effect Transistor (FET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This compact and efficient device is housed in a small SOT-523 package, making it an ideal choice for space-constrained applications.

With its low on-state resistance (R<sub>DS(on)) of just 1.2 Ohms at V<sub>GS = -4.5V, the DMG1013T-7 offers excellent conduction efficiency, which translates to reduced power losses and improved overall system efficiency. Furthermore, this FET is capable of handling a continuous drain current (I<sub>D) of -230mA, making it suitable for a variety of load-switching applications.

The DMG1013T-7 operates at a gate-source voltage (V<sub>GS) range of -1.8V to -8V, providing flexibility in different circuit designs. Its fast switching speed is another notable feature, which is essential for high-frequency applications. The device also boasts a low threshold voltage, ensuring it can be driven by low-voltage logic signals, which is particularly useful in portable electronics where battery life is critical.

Designed with reliability in mind, the DMG1013T-7 incorporates robust protection features. It is inherently immune to latch-up and offers ESD protection, safeguarding the device from electrostatic discharges that can occur during handling or operation. This FET is also characterized by its low leakage current, which is a significant advantage in battery-powered devices, where minimizing standby power consumption is crucial.

In summary, the DMG1013T-7 from Diodes Incorporated is a versatile and energy-efficient solution for a wide range of applications, including power management, battery charging, and load switching. Its small footprint, low on-resistance, and high current handling capability, coupled with its robustness against ESD and latch-up, make it a reliable and high-performing component for designers looking to optimize their circuit designs.

Whether used in consumer electronics, mobile devices, wearables, or industrial control systems, the DMG1013T-7 is engineered to deliver exceptional performance with long-term reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,630+ $0.0307 $50.0410
3,475+ $0.0288 $100.0800
5,400+ $0.0278 $150.1200
7,725+ $0.0259 $200.0775
10,045+ $0.0249 $250.1205
12,555+ $0.0239 $300.0645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600,000 pieces
MOQ: 1630 pcs
Order Increment : 1 pcs
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