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DMG1016V-7

Part No DMG1016V-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 870mA, 640mA
Maximum Rds On at Id,Vgs 400 mOhm @ 600mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.74nC @ 4.5V
Max Input Capacitance 60.67pF @ 16V
Maximum Power Dissipation 530mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 014373-DMG1016V-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG1016V-7 CAD Model

Description

Product Overview: DMG1016V-7 from Diodes Incorporated

The DMG1016V-7 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, analog, and logic semiconductors. This MOSFET is a part of Diodes Incorporated's extensive range of products that are known for their reliability and efficiency in various electronic applications.

Constructed with a small signal surface mount package, the DMG1016V-7 is specifically designed to minimize on-state resistance (R<sub>DS(on)) and to provide superior switching performance and high efficiency. The device is housed in an ultra-compact SOT-523 package, making it an excellent choice for space-constrained applications.

The DMG1016V-7 features a low threshold voltage, which ensures low gate drive requirements, thereby enabling operation with low power logic-level gate drives. This characteristic makes it an ideal component for power management in portable and battery-powered devices where power conservation is critical.

Key specifications of the DMG1016V-7 include:

  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 540mA
  • Gate-Source Voltage (V<sub>GS): ±8V
  • Low On-Resistance (R<sub>DS(on)): 1.25Ω @ V<sub>GS = 4.5V
  • Fast Switching Speed
  • Low Input Capacitance
  • Low Gate Threshold Voltage (V<sub>GS(th))
  • High Forward Transfer Admittance (Y<sub>fs)

Applications for the DMG1016V-7 are diverse and include load/relay drivers, power management, and battery-powered circuits, as well as other logic-level power switching applications. Its low on-resistance and gate threshold voltage make it particularly suitable for high-efficiency power management designs.

Diodes Incorporated ensures that the DMG1016V-7, like all of its products, meets the stringent quality standards required for modern electronic components. Whether you are designing a new piece of equipment or seeking to improve the efficiency of an existing design, the DMG1016V-7 offers the performance and reliability that engineers need to deliver top-notch solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
710+ $0.0708 $50.2680
1,510+ $0.0663 $100.1130
2,345+ $0.0641 $150.3145
3,360+ $0.0596 $200.2560
4,360+ $0.0574 $250.2640
5,445+ $0.0551 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 210,894 pieces
MOQ: 710 pcs
Order Increment : 1 pcs
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