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DMG4435SSS-13

Part No DMG4435SSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.3A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 20V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 35.4nC @ 10V
Max Input Capacitance 1614pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 16 mOhm @ 11A, 20V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 014383-DMG4435SSS-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG4435SSS-13 CAD Model

Description

Overview of DMG4435SSS-13

The DMG4435SSS-13 is a state-of-the-art P-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to provide efficient power management and is suitable for a variety of applications, including load switch, power management, and battery protection circuits.

Key Features

  • Low On-Resistance: The DMG4435SSS-13 boasts a low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • High Threshold Voltage: With a high threshold voltage, this MOSFET ensures reliable operation and helps prevent unintended turn-on of the device, which can be critical in sensitive applications.
  • Advanced Packaging: Enclosed in a compact SOP-8 package, the DMG4435SSS-13 offers a space-saving solution without compromising on performance, making it ideal for space-constrained applications.
  • RoHS Compliant: Adhering to environmental standards, this product is RoHS compliant, ensuring it meets global regulations for hazardous substances.

Electrical Characteristics

The DMG4435SSS-13 operates with a drain-source voltage (VDS) of -30V, and a continuous drain current (ID) of -8.5A, making it a robust choice for high-power applications. Its gate-source voltage (VGS) is rated at ±20V, providing a wide range of operational flexibility.

Applications

With its impressive electrical characteristics, the DMG4435SSS-13 is well-suited for a variety of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Battery management systems
  • Motor control circuits
  • Load switching applications

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The DMG4435SSS-13 is no exception, as it undergoes rigorous testing to ensure reliability and performance under various conditions. Customers can trust in the consistent quality and dependability of this MOSFET for their electronic designs.

For detailed specifications and application notes, engineers and designers are encouraged to consult the datasheet provided by Diodes Incorporated, ensuring the DMG4435SSS-13 is the right choice for their specific application needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9294 $51.1170
115+ $0.8706 $100.1190
180+ $0.8412 $151.4160
260+ $0.7824 $203.4240
335+ $0.7530 $252.2550
415+ $0.7236 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,348 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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