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DMG4800LK3

Part No DMG4800LK3
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Win Source Part Number 1168075-DMG4800LK3
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG4800LK3 CAD Model

Description

Introducing the DMG4800LK3 from Diodes Incorporated

The DMG4800LK3 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed by the renowned semiconductor manufacturer, Diodes Incorporated. This FET is part of their MOSFET product line, known for its high efficiency and reliability in various applications. The DMG4800LK3 is a testament to Diodes Incorporated's commitment to providing advanced electronic components that meet the evolving needs of the industry.

Constructed with state-of-the-art technology, the DMG4800LK3 boasts a low on-resistance (RDS(on)) which significantly reduces conduction losses, making it an ideal choice for power management tasks. This characteristic, combined with its high continuous drain current, allows for efficient power handling and control in circuits, ensuring optimal performance in a compact form factor.

The device is housed in a robust DFN2020-6 (Type C) package, which not only provides excellent thermal performance but also minimizes the PCB space required. This makes the DMG4800LK3 perfect for space-constrained applications where maintaining a small footprint is essential. Additionally, the package is RoHS compliant, adhering to environmental standards and regulations, which is increasingly important for modern electronic products.

With its fast switching speed, the DMG4800LK3 is highly suitable for high-frequency circuits, contributing to reduced switching losses and improved overall efficiency. This feature, along with its low threshold voltage, makes it an excellent choice for low voltage applications, including DC-DC converters, power supplies, and motor control systems.

Diodes Incorporated has equipped the DMG4800LK3 with robust protection features, ensuring that the device can withstand harsh operating conditions. This includes high peak current capability and a rugged gate oxide, which provides protection against voltage spikes and transients, thus extending the lifespan of the FET and the products it is used in.

Overall, the DMG4800LK3 from Diodes Incorporated is a powerful, efficient, and reliable solution for designers looking to enhance their power management systems. Its advanced features and compact design make it a versatile component that can be used in a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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