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DMG8880LSS-13

Part No DMG8880LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.6A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 27.6nC @ 10V
Max Input Capacitance 1289pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.43W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 11.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 014395-DMG8880LSS-13
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG8880LSS-13 CAD Model

Description

Introducing the DMG8880LSS-13 MOSFET from Diodes Incorporated

The DMG8880LSS-13 is a cutting-edge Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a renowned leader in the semiconductor market. This product is built for high-efficiency power management applications and is known for its low power consumption and high reliability.

Constructed with advanced trench technology, the DMG8880LSS-13 is a P-Channel enhancement mode MOSFET that operates at -30V drain-source voltage (V<sub>DS) with a -8A continuous drain current (I<sub>D). Its low threshold voltage ensures that it is easily driven by logic-level voltages, making it an excellent choice for various power switching applications, including load switches, power management circuits, and converters.

The device is housed in a PowerDI3333-8 package, which is known for its small footprint and low profile, allowing for high-density PCB layouts. This packaging is not only space-efficient but also offers superior thermal performance, ensuring that the device operates within its temperature specifications even under high load conditions.

Key features of the DMG8880LSS-13 MOSFET include:

  • Low On-Resistance (R<sub>DS(on)): This MOSFET offers exceptionally low on-resistance, which translates to minimal conduction losses and improved overall efficiency.
  • High Power Dissipation: With the ability to dissipate up to 2.5W, this device can handle significant power, making it suitable for demanding applications.
  • Fast Switching Speed: The fast switching capabilities of the DMG8880LSS-13 reduce switching losses and improve performance in high-frequency operations.
  • RoHS Compliant: The product is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for electronic designs.

Whether you're designing power supplies, DC-DC converters, or looking to improve the efficiency of your battery management systems, the DMG8880LSS-13 from Diodes Incorporated is a reliable and powerful component that ensures performance and durability. Its robust design, combined with its energy-saving features, make it an indispensable part of modern electronic applications.

For engineers and designers seeking a high-performance P-Channel MOSFET, the DMG8880LSS-13 offers the perfect blend of efficiency, reliability, and eco-friendliness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5301 $58.3110
270+ $0.4343 $117.2610
415+ $0.4216 $174.9640
570+ $0.4077 $232.3890
735+ $0.3939 $289.5165
985+ $0.3534 $348.0990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,900 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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