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DMN1004UFDF-7

Part No DMN1004UFDF-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 15A 6UDFN / N-Channel 12 V 15A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 15A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2385 pF @ 6 V
Power Dissipation (Max) 2.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package U-DFN2020-6
Case / Package 6-UDFN Exposed Pad
Base Product Number DMN1004
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1324343-DMN1004UFDF-7
Ultra Librarian 3D Model Ultra Librarian DMN1004UFDF-7 CAD Model

Description

Introducing the DMN1004UFDF-7 MOSFET from Diodes Incorporated

The DMN1004UFDF-7 is a high-performance, N-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This compact and efficient MOSFET is designed to meet the rigorous demands of power management applications within a wide array of electronic devices. The DMN1004UFDF-7 is an ideal choice for designers looking for a combination of low on-resistance, high switching speed, and minimal power loss.

Constructed with advanced trench technology, the DMN1004UFDF-7 boasts an impressive R<sub>DS(on) value, ensuring reduced conduction losses and improved overall efficiency. Its small form factor, housed in a flat leadless DFN2020-6 (SOT883) package, allows for high-density board layouts and is perfect for space-constrained applications.

Key Features of the DMN1004UFDF-7:

  • Low On-Resistance: With a low threshold voltage and reduced on-resistance, this MOSFET offers high efficiency, which is crucial for power-sensitive designs.
  • High-Speed Switching: The device provides fast switching capabilities, making it suitable for high-frequency circuits and improving performance in applications such as DC-DC converters, load switches, and power management systems.
  • Power Dissipation: It is capable of handling a continuous drain current, leading to effective power dissipation and enhanced thermal performance.
  • RoHS Compliant: The DMN1004UFDF-7 is environmentally friendly, complying with RoHS standards, which restricts the use of certain hazardous substances in electronic equipment.

The DMN1004UFDF-7 is not only a testament to Diodes Incorporated's commitment to providing high-quality components but also reflects the company's dedication to innovation in power management technology. Whether it's for mobile phones, portable electronics, or complex industrial systems, the DMN1004UFDF-7 is designed to deliver reliable and efficient performance.

With its robust construction and advanced features, the DMN1004UFDF-7 stands out as a superior choice for engineers and designers seeking to optimize their power circuitry without compromising on space or performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2215 $58.6975
640+ $0.1817 $116.2880
985+ $0.1760 $173.3600
1,360+ $0.1704 $231.7440
1,755+ $0.1647 $289.0485
2,350+ $0.1476 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,093 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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