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DMN10H120SFG-7

Part No DMN10H120SFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.8A POWERDI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10.6nC @ 10V
Max Input Capacitance 549pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 1033712-DMN10H120SFG-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN10H120SFG-7 CAD Model

Description

Product Overview: DMN10H120SFG-7

The DMN10H120SFG-7 is a high-performance, surface-mount MOSFET from Diodes Incorporated, designed for a variety of applications that demand high efficiency and reliability. This N-Channel enhancement mode field effect transistor is part of Diodes Incorporated's extensive range of power management devices, offering designers a compact, power-dense solution for their circuit designs.

Key Features

  • Low On-Resistance: The DMN10H120SFG-7 boasts an exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency in applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) rating, this MOSFET can handle significant current, making it suitable for high-power applications.
  • PowerDI®5060-8 Package: Encased in a PowerDI®5060-8 package, it not only ensures a compact footprint but also offers excellent thermal performance, essential for maintaining stability and longevity.
  • Fast Switching Speed: The device is engineered for fast switching, reducing transition losses and enabling efficient operation at high frequencies.
  • Low Threshold Voltage: A low gate threshold voltage (V<sub>GS(th)) allows for the MOSFET to be easily driven at lower voltages, which is advantageous in low-voltage applications.

Applications

The DMN10H120SFG-7 is versatile and can be used in a range of applications, including:

  • DC-DC Converters
  • Power Management Functions
  • Load Switches
  • Battery Management Systems
  • Motor Drives
  • Computing and Server Applications

Quality and Reliability

Diodes Incorporated is known for their commitment to quality, and the DMN10H120SFG-7 is no exception. It is designed to meet the stringent requirements of industrial and commercial applications. With features such as its high thermal performance and robust package design, this MOSFET is built to deliver consistent performance over a wide range of operating conditions.

Conclusion

The DMN10H120SFG-7 from Diodes Incorporated represents a blend of efficiency, power density, and reliability. Its advanced features make it an ideal choice for engineers looking to optimize their power management systems in both space-constrained and power-intensive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5437 $51.6515
225+ $0.4462 $100.3950
350+ $0.4322 $151.2700
480+ $0.4183 $200.7840
620+ $0.4043 $250.6660
830+ $0.3625 $300.8750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,294 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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