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DMN2005LP4K-7

Part No DMN2005LP4K-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 200MA 3-DFN / Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Gate-Source Threshold Voltage 900mV @ 100μA
Max Input Capacitance 41pF @ 3V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 10mA, 4V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X2-DFN1006-3
Dimension 3-XFDFN
Win Source Part Number 014411-DMN2005LP4K-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMN2005LP4K
Introduction Date December 20, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian DMN2005LP4K-7 CAD Model

Description

DMN2005LP4K-7 MOSFET by Diodes Incorporated

The DMN2005LP4K-7 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is part of the company's extensive range of semiconductor products and is well-suited for a variety of applications, including power management, load switching, and conversion in consumer electronics, computing devices, and portable equipment.

Key Features

  • Device Type: N-Channel MOSFET
  • Package: The DMN2005LP4K-7 is housed in a small and efficient X2-DFN1006-3 (DGP) package, which is optimized for minimal footprint and low profile applications.
  • Drain-Source Voltage (VDS): It can handle a maximum drain-source voltage of 20V, making it suitable for various low voltage applications.
  • Continuous Drain Current (ID): The device offers a continuous drain current of 1.1A at 25°C, providing sufficient current handling capability for most small-scale electronic applications.
  • RDS(on): It features a low on-resistance of 320mΩ at VGS=4.5V, which helps to reduce power losses and improve efficiency in circuit operation.
  • Gate Threshold Voltage (VGS(th)): The transistor has a typical gate threshold voltage of 0.45V, which allows for low voltage operation and control.
  • Fast Switching Speed: Designed for fast switching, the DMN2005LP4K-7 ensures efficient performance in high-speed circuitry.
  • RoHS Compliant: The product is compliant with RoHS standards, ensuring that it meets global environmental and regulatory requirements.

Applications

The DMN2005LP4K-7's versatility allows it to be used in a broad range of applications. It is particularly useful in:

  • Power management systems
  • DC-DC converters
  • Battery management circuits
  • Load switches
  • Portable electronic devices such as smartphones and tablets
  • Notebook computers and peripherals

With its compact size and high-performance characteristics, the DMN2005LP4K-7 from Diodes Incorporated is an excellent choice for designers looking to optimize their power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2359 $50.7185
455+ $0.2209 $100.5095
705+ $0.2135 $150.5175
1,010+ $0.1986 $200.5860
1,310+ $0.1911 $250.3410
1,635+ $0.1836 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,000 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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